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BFS480
NPN Silicon RF Transistor
4
For low noise, low-power amplifiersin mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m f T = 7 GHz F = 1.5 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package
C1 6 E2 5 B2 4
5 6
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Junction temperature Ambient temperature Storage temperature Thermal Resistance
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
1
Junction - soldering point2)

2 1
3
VPS05604
TR2
TR1
1 B1
2 E1
3 C2
EHA07196
Type BFS480
Maximum Ratings Parameter
Marking REs
Pin Configuration
Package
1=B 2=E 3=C 4=B 5=E 6=C SOT363
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS
8 10 10 2 10 1.2 80 150 -65 ... 150 -65 ... 150
V
mA mW C
112 C 1)
RthJS
470
K/W
Jun-27-2001
BFS480
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V hFE 30 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 8 V Symbol min. Values typ. max. Unit
2
Jun-27-2001
BFS480
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 1.5 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 3 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 3 mA, VCE = 5 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ms
Symbol min. fT Ccb Cce Ceb F Gms |S21e|2 5 -
Values typ. 7.5 0.23 0.1 0.23 max. 0.4 -
Unit
GHz pF
dB 1.5 2 -
18 14
-
14 9.5
-
= |S21 / S12 |
3
Jun-27-2001
BFS480
Total power dissipation Ptot = f (TS )
100
mW
80 70 60 50 40 30 20 10 0 0 120 C
P tot
20
40
60
80
100
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax/P totDC = f (tp)
10 3 10 2
K/W
Ptotmax / PtotDC
-
10 2
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Jun-27-2001
BFS480
Collector-base capacitance Ccb = f (VCB )
Transition frequency f T = f (I C)
V CE = Parameter
f = 1MHz
0.40
pF
10
GHz
10V 5V 3V 2V
0.30
8 7
Ccb
0.25
fT
6 5
0.20
0.15 4 0.10 3 2 1 0
1V 0.7V
0.05
0.00 0
2
4
6
8
V
12
2
4
6
8
mA
12
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
22
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
15
dB
dB
8V 2V
8V
13
3V
18
12
2V
G
G
16
1V
11 10 9
1V
14
0.7V
12
8 7
0.7V
10 6 8 0 5 0
2
4
6
8
mA
12
2
4
6
8
mA
12
IC
IC
5
Jun-27-2001
BFS480
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
20
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
22
IC=3mA
dB
0.9GHz dBm 8V 5V 3V 2V
16
0.9GHz
14
14
G
12
1.8GHz
IP 3
1.8GHz
10 6 2
1V
10 8 6 4 2 0 0 -2 -6 -10 -14 0
1
2
3
4
5
6
7
8
V
10
2
4
6
8
mA
11
VCE
IC
Power Gain Gma , Gms = f(f)
VCE = Parameter
30
dB
Power Gain |S21|2= f(f)
V CE = Parameter
20
IC=3mA
dB
IC =3mA
26 24 22 16
G
20 18 16 10 14 12 10 8 6 0.0 0.5 1.0 1.5 2.0 2.5
8V 1V 0.7V GHz
G
14
12
8
8V 1V 0.7V
6
3.5
4 0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
f
6
Jun-27-2001

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